NEAR INFRARED RAY IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR

According to one embodiment of the present invention, a near infrared ray image sensor comprises: a TFT panel including a gate electrode, a source electrode, and a drain electrode; a pixel electrode connected to the TFT panel; a photoelectric conversion material layer formed on the pixel electrode a...

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Bibliographic Details
Main Author JUNG, TAE HO
Format Patent
LanguageEnglish
Korean
Published 08.03.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment of the present invention, a near infrared ray image sensor comprises: a TFT panel including a gate electrode, a source electrode, and a drain electrode; a pixel electrode connected to the TFT panel; a photoelectric conversion material layer formed on the pixel electrode and generating an electric charge when a near infrared ray is irradiated; and a transparent electrode formed on the photoelectric conversion material layer and transferring the electric charge generated by the photoelectric conversion material layer to the drain electrode. 본 발명의 일 실시 예에 따른 근적외선 이미지 센서는, 게이트(Gate) 전극, 소스(Source) 전극 및 드레인(Drain) 전극을 포함하는 TFT 패널 및 상기 TFT 패널과 결합하며, 픽셀(Pixel) 전극, 상기 픽셀 전극 상에 형성되며, 근적외선이 조사되면 전하를 생성하는 광전 변환 물질층 및 상기 광전 변환 물질층 상에 형성되며, 상기 광전 변환 물질층이 생성한 전하를 상기 드레인 전극으로 전달하는 투명 전극을 포함한다.
Bibliography:Application Number: KR20170109445