SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

According to one embodiment of the present invention, a semiconductor device with a simplified process comprises: a substrate; a plurality of channel layers stacked on the substrate; a gate electrode surrounding the channel layers; and embedded source/drain layers disposed at both sides of the gate...

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Bibliographic Details
Main Authors YANG, JUNG GIL, SONG, SEUNG MIN, BAE, GEUM JONG, PARK, WOO SEOK, SUH, DONG CHAN, BAE, DONG IL
Format Patent
LanguageEnglish
Korean
Published 08.03.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment of the present invention, a semiconductor device with a simplified process comprises: a substrate; a plurality of channel layers stacked on the substrate; a gate electrode surrounding the channel layers; and embedded source/drain layers disposed at both sides of the gate electrode and including a first region and a second region disposed on the first region and including a plurality of layers with different compositions from each other. 본 발명의 일 실시예에 따른 반도체 장치는 기판, 상기 기판 상에 적층되는 복수의 채널층들, 상기 복수의 채널층들을 감싸는 게이트 전극, 및 상기 게이트 전극의 양측에 배치되고, 제1 영역 및 상기 제1 영역 상에 배치되고 서로 조성이 다른 복수의 층들을 포함하는 제2 영역을 포함하는 임베디드 소스/드레인층들을 포함한다.
Bibliography:Application Number: KR20170109428