FIN-BASED STRAP CELL STRUCTURE

• Main Author: LIAW JHON JHY
• Format: Patent
• Language: English; Korean
• Published: 22.02.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to the present invention, disclosed is a fin-based strap cell structure for increasing performance of a memory array such as an SRAM array. An exemplary integrated circuit (IC) device comprises a FinFET disposed over a doped region of a first type dopant. The FinFET comprises a first fin s...