SUBSTRATE PROCESSING APPARATUS SUBSTRATE LOADING MECHANISM AND SUBSTRATE PROCESSING METHOD

The present invention relates to a substrate processing apparatus to continuously perform a plurality of processes with a different temperature with respect to a substrate to be processed in one processing vessel at high throughput, a substrate loading mechanism, and a substrate processing method. A...

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Bibliographic Details
Main Authors TSUDA EINOSUKE, KAMAISHI TAKAYUKI, MURAKAMI SEISHI
Format Patent
LanguageEnglish
Korean
Published 27.12.2018
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Summary:The present invention relates to a substrate processing apparatus to continuously perform a plurality of processes with a different temperature with respect to a substrate to be processed in one processing vessel at high throughput, a substrate loading mechanism, and a substrate processing method. According to the present invention, the substrate processing apparatus comprises: the processing vessel (1); a processing gas supply mechanism (4) to supply a processing gas to the processing vessel (1); a substrate mounting plate (21) to mount a substrate (W) to be processed thereon; a refrigerant flow path (27) installed in a main body (22) of the substrate mounting plate (21); a refrigerant sampling mechanism (79a, 79b) to sample the refrigerant from the refrigerant flow path (27); a heater (25) printed on the rear surface of an electrostatic chuck (23); and a temperature control unit (6) passing the refrigerant through the refrigerant flow path (27) to adjust the temperature at a first temperature, performing heating by the heater (25), and sampling the refrigerant of the refrigerant flow path (27) with the refrigerant sampling mechanism (79a, 79b) to adjust the substrate (W) to be processed at a second temperature higher than the first temperature. Accordingly, the substrate processing apparatus continuously performs processing by the first temperature and processing by the second temperature. 본 발명은, 하나의 처리 용기 내에서, 피처리 기판에 대하여 온도가 상이한 복수의 공정을 연속적으로 고스루풋으로 행한다. 처리 용기(1)와, 처리 용기(1) 내에 처리 가스를 공급하는 처리 가스 공급 기구(4)와, 피처리 기판(W)을 적재하는 기판 적재대(21)와, 기판 적재대(21)의 본체(22)에 설치된 냉매 유로(27)와, 냉매 유로(27)로부터 냉매를 발취하는 냉매 발취 기구(79a, 79b)와, 정전 척(23)의 이면에 프린트된 히터(25)와, 냉매 유로(27)에 냉매를 통류시켜 피처리 기판(W)을 제1 온도로 온도 조절하고, 히터(25)에 의한 가열을 행함과 함께, 냉매 발취 기구(79a, 79b)에 의해 냉매 유로(27)의 냉매를 발취하여, 피처리 기판(W)을 제1 온도보다도 높은 제2 온도로 온도 조절하는 온도 제어부(6)를 갖고, 제1 온도에 의한 처리와, 제2 온도에 의한 처리를 연속해서 행한다.
Bibliography:Application Number: KR20180065967