METHODS FOR FORMING LOW TEMPERATURE SEMICONDUCTOR LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
Disclosed is a method for forming a metal nitride film with good film closure at a low temperature. The method may comprise a step of utilizing plasma to form NH and NH_2 radicals to allow the formation of metal nitride at a low temperature. The method may also comprise a step of flowing etch gas to...
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| Main Authors | , , |
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| Format | Patent |
| Language | English Korean |
| Published |
12.12.2018
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Disclosed is a method for forming a metal nitride film with good film closure at a low temperature. The method may comprise a step of utilizing plasma to form NH and NH_2 radicals to allow the formation of metal nitride at a low temperature. The method may also comprise a step of flowing etch gas to form an amorphous film with uniform thickness. The method may also comprise a step of flowing alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.
저온에서 막 폐쇄가 양호한 금속 질화물 막을 형성하는 방법이 개시된다. 본 방법은 NH 또는 NH라디칼을 형성하는 데 플라즈마를 사용해서 저온에서 금속 질화물이 형성될 수 있게 하는 단계를 포함할 수 있다. 또한 본 방법은 에칭 가스를 유동시켜서 균일한 두께의 비정질 막을 생성하는 단계를 포함할 수 있다. 또한 본 방법은 알킬 히드라진을 유동시켜서 금속 질화물 막의 3차원 섬 성장을 방해하는 단계를 포함할 수 있다. |
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| AbstractList | Disclosed is a method for forming a metal nitride film with good film closure at a low temperature. The method may comprise a step of utilizing plasma to form NH and NH_2 radicals to allow the formation of metal nitride at a low temperature. The method may also comprise a step of flowing etch gas to form an amorphous film with uniform thickness. The method may also comprise a step of flowing alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.
저온에서 막 폐쇄가 양호한 금속 질화물 막을 형성하는 방법이 개시된다. 본 방법은 NH 또는 NH라디칼을 형성하는 데 플라즈마를 사용해서 저온에서 금속 질화물이 형성될 수 있게 하는 단계를 포함할 수 있다. 또한 본 방법은 에칭 가스를 유동시켜서 균일한 두께의 비정질 막을 생성하는 단계를 포함할 수 있다. 또한 본 방법은 알킬 히드라진을 유동시켜서 금속 질화물 막의 3차원 섬 성장을 방해하는 단계를 포함할 수 있다. |
| Author | RAISANEN PETRI MOUSA MOATAZ BELLAH HSU PENG FU |
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| Snippet | Disclosed is a method for forming a metal nitride film with good film closure at a low temperature. The method may comprise a step of utilizing plasma to form... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | METHODS FOR FORMING LOW TEMPERATURE SEMICONDUCTOR LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES |
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