METHODS FOR FORMING LOW TEMPERATURE SEMICONDUCTOR LAYERS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

Disclosed is a method for forming a metal nitride film with good film closure at a low temperature. The method may comprise a step of utilizing plasma to form NH and NH_2 radicals to allow the formation of metal nitride at a low temperature. The method may also comprise a step of flowing etch gas to...

Full description

Saved in:
Bibliographic Details
Main Authors RAISANEN PETRI, HSU PENG FU, MOUSA MOATAZ BELLAH
Format Patent
LanguageEnglish
Korean
Published 12.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Disclosed is a method for forming a metal nitride film with good film closure at a low temperature. The method may comprise a step of utilizing plasma to form NH and NH_2 radicals to allow the formation of metal nitride at a low temperature. The method may also comprise a step of flowing etch gas to form an amorphous film with uniform thickness. The method may also comprise a step of flowing alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film. 저온에서 막 폐쇄가 양호한 금속 질화물 막을 형성하는 방법이 개시된다. 본 방법은 NH 또는 NH라디칼을 형성하는 데 플라즈마를 사용해서 저온에서 금속 질화물이 형성될 수 있게 하는 단계를 포함할 수 있다. 또한 본 방법은 에칭 가스를 유동시켜서 균일한 두께의 비정질 막을 생성하는 단계를 포함할 수 있다. 또한 본 방법은 알킬 히드라진을 유동시켜서 금속 질화물 막의 3차원 섬 성장을 방해하는 단계를 포함할 수 있다.
Bibliography:Application Number: KR20180060499