피처리체를 처리하는 방법

• Main Authors: HISAMATSU TORU, KIHARA YOSHIHIDE
• Format: Patent
• Language: Korean
• Published: 04.12.2018
• Subjects: ADHESIVES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MATERIALS THEREFOR; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORIGINALS THEREFOR; PAINTS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; PLASMA TECHNIQUE; POLISHES; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

일 실시형태에 있어서 웨이퍼(W)는 피에칭층(EL)과 피에칭층(EL) 상에 마련된 마스크(MK4)를 구비하고, 일 실시형태의 방법 MT는, 플라즈마를 발생시켜 평행 평판 전극의 상부 전극(30)에 직류 전압을 인가함으로써 이차 전자를 조사함과 함께 산화 실리콘 화합물로 마스크(MK4)를 덮는 공정 ST9a와, 플루오로카본계 가스의 플라즈마를 생성하여 라디칼을 포함하는 혼합층(MX2)을 피에칭층(EL)의 표면의 원자층에 형성하는 공정 ST9b와, Ar 가스의 플라즈마를 생성하여 바이어스 전압을 인가하여 혼합층(MX2)을 제거하는 ST9d를 포함하는 시퀀스 SQ3을 반복 실행하여, 피에칭층(EL)을 원자층마다 제거함으로써 피에칭층(EL)을 에칭한다. In a method MT according to an embodiment of the present invention, a wafer W is provided with a layer to be etched EL and a mask layer MK4 provided on the layer to be etched EL, and the layer to be etched EL is etched as a result of removing individual atomic layers of the layer to be etched EL by repeatedly performing a sequence SQ3 including the following steps: a step ST9a in which secondary electrons are irradiated and the mask MK4 is covered with a silicon oxide compound by generating plasma and applying DC voltage to an upper electrode 30 of a parallel plate electrode; a step ST9b in which a fluorocarbon gas plasma is generated and a mixed layer MX2 including radicals is formed on the atomic layer on the surface of the layer to be etched EL; and a step ST9d in which Ar gas plasma is generated and the mixed layer MX2 is removed by applying bias voltage.