EL THIN FILM TRANSISTOR SUBSTRATE LIQUID CRYSTAL DISPLAY DEVICE ORGANIC EL DEVICE RADIATION-SENSITIVE RESIN COMPOSITION AND PROCESS FOR PRODUCING THE THIN FILM TRANSISTOR SUBSTRATE

• Main Authors: HONDA AKIHISA, WAKABAYASHI RYUUTAROU, KURATA RYOUHEI, MIMURA TOKIO
• Format: Patent
• Language: English; Korean
• Published: 25.10.2018
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

The present invention is to provide a thin film transistor substrate having an interlayer insulating film which is hardly whitened at the time of high temperature treatment and in which the generation of outgas is suppressed; a liquid crystal display device or an organic EL element having the thin film transistor substrate; a radiation-sensitive resin composition capable of suitably forming the interlayer insulating film; and a method of manufacturing the thin film transistor substrate. The thin film transistor substrate comprises a substrate, a thin film transistor disposed on the substrate, and an interlayer insulating film disposed on the thin film transistor wherein the interlayer insulating film includes a polymer having a structure represented by formula (1). In formula (1), R^1 represents a divalent linking group containing a hetero atom, R^2 represents a monovalent organic group containing an aromatic ring, and * represents the binding site. (과제) 고온 처리시에 백화하기 어렵고, 아웃 가스의 발생이 억제된 층간 절연막을 구비하는 박막 트랜지스터 기판, 이것을 구비하는 액정 표시 소자나 유기 EL 소자 및, 당해 층간 절연막을 적합하게 형성할 수 있는 감방사선성 수지 조성물, 그리고 박막 트랜지스터 기판의 제조 방법을 제공한다. (해결 수단) 기판과, 상기 기판 상에 배치된 박막 트랜지스터와, 상기 박막 트랜지스터의 위에 배치된 층간 절연막을 갖는 박막 트랜지스터 기판으로서, 상기 층간 절연막이, 하기식 (1)로 나타나는 구조를 갖는 중합체를 포함하는 박막 트랜지스터 기판에 관한 것이다.(식 (1) 중, R은, 헤테로 원자를 포함하는 2가의 연결기를 나타내고, R는, 방향환을 포함하는 1가의 유기기를 나타낸다. *는 결합 부위를 나타낸다.)