WCN / SELECTIVE DEPOSITION OF WCN BARRIER/ADHESION LAYER FOR INTERCONNECT

The present invention provides methods for forming diffusion barriers and adhesion layers for interconnect units such as cobalt (Co) interconnect units or ruthenium (Ru) interconnect units. The methods involve selective deposition of tungsten carbon nitride (WCN) on oxide surfaces of a feature inclu...

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Bibliographic Details
Main Authors RATHOD MEGHA, HUMAYUN RAASHINA, LAI CHIUKIN STEVEN, NA JEONG SEOK
Format Patent
LanguageEnglish
Korean
Published 11.10.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides methods for forming diffusion barriers and adhesion layers for interconnect units such as cobalt (Co) interconnect units or ruthenium (Ru) interconnect units. The methods involve selective deposition of tungsten carbon nitride (WCN) on oxide surfaces of a feature including a Co surface. While maintaining excellent film coverage properties, adhesion properties, and/or barrier properties on sidewall oxide surfaces, selective growth of the WCN on oxide causes contact resistance at an interface such as a Co-Co interface or a Co-Ru interface to be significantly reduced. 코발트 (Co) 상호접속부들 또는 루테늄 (Ru) 상호접속부들과 같은 상호접속부들을 위한 확산 배리어들 및 접착층들을 형성하는 방법들이 제공된다. 방법들은 Co 표면을 포함하는 피처의 옥사이드 표면들 상에 텅스텐 탄소 나이트라이드 (WCN) 의 선택적인 증착을 수반한다. 측벽 옥사이드 표면들 상에서 우수한 막 커버리지 특성, 접착 특성, 및/또는 배리어 특성을 유지하는 동안 옥사이드 상의 WCN의 선택적인 성장은 Co-Co 계면 또는 Co-Ru 계면과 같은 계면에서의 콘택트 저항으로 하여금 상당히 감소되게 한다.
Bibliography:Application Number: KR20180035564