중합체, 조성물, 희생층의 생성, 및 이들을 사용하는 반도체 디바이스를 위한 방법

• Main Authors: NOYA GO, YANAGITA HIROSHI, HAMA YUSUKE, NAKASUGI SHIGEMASA, KUROSAWA KAZUNORI
• Format: Patent
• Language: Korean
• Published: 01.10.2018
• Subjects: ADHESIVES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL PAINT OR INK REMOVERS; CHEMISTRY; CINEMATOGRAPHY; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; COMPOSITIONS BASED THEREON; CORRECTING FLUIDS; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; FILLING PASTES; HOLOGRAPHY; INKS; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; POLISHES; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF MATERIALS THEREFOR; WOODSTAINS

본 발명은, 중합체, 조성물, 희생층의 형성, 및 포토리소그래피 방법에 의해 포토레지스트를 사용하여 패턴이 생성되는 단계를 포함하는 반도체 디바이스의 제조방법에 관한 것이다. The present invention relates to a polymer, composition, the forming of a sacrificial layer and a method for producing a semiconductor device comprising a step during which a pattern is made using a photoresist by the photolithography method.