SEMICONDUCTOR LIGHT EMITTING DEVICE
Provided is a semiconductor light emitting device with improved electrostatic characteristics. According to an embodiment of the present invention, the semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit passing through at least a part of the n-type semiconductor la...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
19.09.2018
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Subjects | |
Online Access | Get full text |
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