SEMICONDUCTOR LIGHT EMITTING DEVICE

• Main Authors: KWAK, WOO CHUL, PARK, SEUNG CHUL, YUN, JUN HO
• Format: Patent
• Language: English; Korean
• Published: 19.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a semiconductor light emitting device with improved electrostatic characteristics. According to an embodiment of the present invention, the semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit passing through at least a part of the n-type semiconductor layer; an active layer positioned on the n-type semiconductor layer, and filling the V-pit; and a p-type semiconductor layer positioned on the active layer. The active layer includes a plurality of layers, and some of the plurality of layers have a flat shape on the V-pit. 반도체 발광 소자가 제공된다. 일 실시예에 따른 반도체 발광 소자는 n형 반도체층; n형 반도체층의 적어도 일부를 관통하는 V-피트; n형 반도체층 상에 위치하며 상기 V-피트를 채우는 활성층; 및 활성층 상에 위치하는 p형 반도체층을 포함하고, 활성층은 복수의 층을 포함하고, 복수의 층 중 일부는 V-피트 상에 플랫한 형상을 갖는다.