코발트-함유 막 형성 조성물, 이의 합성, 및 막 증착에서의 용도

• Main Authors: BLASCO NICOLAS, DUSSARRAT CHRISTIAN, GATINEAU SATOKO, GIRARD JEAN MARC, KIMURA MIKIKO
• Format: Patent
• Language: Korean
• Published: 04.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

코발트-함유 막 형성 조성물, 이의 제조, 및 막의 증기 증착을 위한 이의 용도가 개시된다. 코발트-함유 막 형성 조성물은 실릴아미드-함유 전구체, 특히, Co[N(SiMe)](NMeEt) 및/또는 Co[N(SiMe)](NMeEt)를 포함한다. Methods of depositing Co-containing layers on substrates are disclosed. The vapor of a Co-containing film forming composition is introduced into a reactor having a substrate disposed therein. The Co-containing film forming compositions comprise a silylamide-containing precursor selected from Co[N(SiMe3)2]2(NMe2Et), Co[N(SiMe3)2]2(NMeEt2), or combinations thereof. At least part of the silylamide-containing precursor is deposited onto the substrate to form the Co-containing layer using a vapor deposition method.