FILM FORMING APPARATUS

• Main Authors: FUKIAKGE NORIAKI, OSHIMO KENTARO, HANE HIDEOMI, OGAWA JUN, OTSUKI SHIMON, OTANI MUNEYUKI
• Format: Patent
• Language: English; Korean
• Published: 29.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An objective of the present invention is to improve a loading effect and form a nitride film of good quality. A gas supply/exhaust unit (2), a first reforming region (R2), a reaction region (R3) for performing a nitrification process, and a second reforming region (R4) are installed in the order listed from an upstream side of the rotating direction of a rotary table (12). For example, in forming a silicon nitride film, H_2 gas supplied to the first and the second reforming region (R2, R4) is supplied in a minute quantity. Therefore, since a nitrification process by NH_3 gas is restrained from being impeded by H_gas in the reaction region, nitrification efficiency is improved and a loading effect is improved. As a result, a nitride film of good quality having a low etching rate can be formed while improving a loading effect. 본 발명은, 로딩 효과를 개선하면서, 양질의 질화막을 형성하는 것이다. 가스 급배기 유닛(2), 제1 개질 영역(R2), 질화 처리를 행하는 반응 영역(R3), 제2 개질 영역(R4)을, 회전 테이블(12)의 회전 방향 상류측에서부터 이 순서로 설치한다. 예를 들어 실리콘 질화막을 성막함에 있어서, 제1 개질 영역(R2) 및 제2 개질 영역(R4)에 공급되는 H가스는 미량의 공급량이 되도록 구성되어 있다. 이 때문에, 반응 영역에서는 NH가스에 의한 질화 처리가 H가스에 의해 저해되는 것이 억제되므로, 질화 효율이 향상되고, 로딩 효과가 개선된다. 그 결과, 로딩 효과를 개선하면서, 에칭 레이트가 낮은 양질의 질화막을 형성할 수 있다.