ITO ITO ITO ITO SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME ITO TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ITO TRANSPARENT ELECTROCONDUCTIVE FILM

• Main Author: KAKENO TAKASHI
• Format: Patent
• Language: English; Korean
• Published: 20.08.2018
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CABLES; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

In, Sn, O, 및 불가피적 불순물로 이루어지는 소결체로서, 원자비로 Sn/(In ＋ Sn) 이 1.8 ％ 이상 3.7 ％ 이하 (단, 3.7 ％ 를 제외한다) 가 되는 Sn 을 함유하고, 소결체의 평균 결정 입경이 1.0 ∼ 5.0 ㎛ 의 범위이고, 장축 직경 0.1 ∼ 1.0 ㎛ 인 공공이 면적 비율 0.5 ％ 이하이고, 산화인듐상과 산화주석 리치상의 2 상으로 되어 있고, 산화주석 리치상의 면적률이 0.1 ∼ 1.0 ％ 이하이고, 산화주석 리치상의 95 ％ 이상이 입계 삼중점에 존재하는 것을 특징으로 하는 스퍼터링 타겟에 관한 것이다. 투명 도전막 형성에 바람직한, 저온에서도 저저항의 막을 얻는 것이 가능한 저산화주석 조성의 ITO 스퍼터링 타겟이고, 타겟의 입경이 작고, 고밀도이고, 강도가 높고, 아킹이나 노듈을 저감시킬 수 있는 스퍼터링 타겟을 제공할 수 있다. The present invention relates to a sputtering target characterized by being a sintered compact comprising In, Sn, O, and unavoidable impurities, the sintered compact containing Sn in an atomic ratio Sn/(In + Sn) of 1.8% to 3.7% (excluding 3.7%), the average crystal grain size of the sintered compact being in the range of 1.0-5.0 µm, vacancies having a major-axis diameter of 0.1-1.0 µm constituting an area ratio of 0.5% or less, the sintered compact having two phases including an indium oxide phase and a tin-oxide-rich phase, the area ratio of the tin-oxide-rich phase being 0.1-1.0%, and 95% or more of the tin-oxide-rich phase being present at grain boundary triple points. The present invention makes it possible to provide an ITO sputtering target suitable for forming a transparent electroconductive film and which has a low tin oxide content and enables a low-resistance film to be obtained even at low temperature, the sputtering target having a small grain size, high density, and high strength, and making it possible to reduce the occurrence of arcing or nodules.