LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES

• Main Authors: VRTIS RAYMOND NICHOLAS, MATZ LAURA M, HAAS MARY KATHRYN
• Format: Patent
• Language: English; Korean
• Published: 20.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a deposition method for generating porous organic silica glass film, which comprises the following steps of: introducing one precursor of organosilane or organosiloxane and essentially aromatic porogen different from the precursor into a vacuum chamber; applying energy to the gaseous reagent to induce reaction of the reagent so as to deposit a film containing the porogen; and removing substantially all of the organic material by using UV radiation so as to provide a porous film having a dielectric constant and porosity of less than 2.6. 본 발명은 진공 챔버에, 유기실란 또는 유기실록산의 하나의 전구체, 및 상기 전구체와 다른 본질적으로 방향족인 포로겐을 도입하는 단계; 챔버내의 가스상 시약에 에너지를 가하여 가스상 시약의 반응을 유도하여 포로겐을 함유한 필름을 증착시키는 단계; 및 UV선으로 실질적으로 모든 유기 물질을 제거하여 2.6 미만의 유전상수 및 기공을 갖는 다공성 필름을 제공하는 단계를 포함하는 다공성 유기실리카 유리 필름을 생산하기 위한 증착법에 관한 것이다.