금속 필름의 생성을 위한 방법

• Main Authors: AHLF MARAIKE, ABELS FALKO, LOEFFLER DANIEL, GASPAR BORIS, SPIELMANN JAN, BLASBERG FLORIAN, SCHAUB THOMAS, MATOS KARL, KIRSTE AXEL, SCHWEINFURTH DAVID DOMINIQUE
• Format: Patent
• Language: Korean
• Published: 08.08.2018
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은, 기판 상에 무기 박막을 형성하기 위한 방법, 특히 원자층 침착 방법의 분야에 관한 것이다. 본 발명은, (a) 금속-함유 화합물을 기체 상태로부터 고체 기판 상에 침착시키는 단계 및 (b) 침착된 금속-함유 화합물을 가진 상기 고체 기판을, 기체 상태의 환원제와 접촉시키는 단계를 포함하되, 이때 상기 환원제는 카르벤, 실릴렌, 또는 인 라디칼이거나, 이를 상기 고체 기판의 표면에서 적어도 부분적으로 생성하는, 금속 필름 제조 방법에 관한 것이다. The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.