IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

The present technique relates to an image sensor with improved performance. According to an embodiment of the present invention, the image sensor comprises a substrate including a photoelectric conversion element; a transmission gate formed on the photoelectric conversion element; and a channel film...

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Bibliographic Details
Main Author PARK, SUNG KUN
Format Patent
LanguageEnglish
Korean
Published 27.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present technique relates to an image sensor with improved performance. According to an embodiment of the present invention, the image sensor comprises a substrate including a photoelectric conversion element; a transmission gate formed on the photoelectric conversion element; and a channel film controlled by the transmission gate. The channel film includes a first region adjacent to the photoelectric conversion element and a second region spaced apart from the photoelectric conversion element. The first region and the second region may have different crystalline states. 본 기술은 이미지 센서에 관한 것으로, 실시예에 따른 이미지 센서는 광전변환소자를 포함하는 기판; 상기 광전변환소자 상에 형성된 전송게이트; 및 상기 전송게이트에 의해 제어되는 채널막을 포함하고, 상기 채널막은 광전변환소자에 접하는 제1영역 및 상기 광전변환소자로부터 이격된 제2영역을 포함하고, 상기 제1영역과 상기 제2영역은 서로 다른 결정상태를 가질 수 있다.
Bibliography:Application Number: KR20170009151