VERTICAL TYPE LIGHT EMITTING DIODE

Provided is a vertical light emitting diode having a mesa having a groove. According to an embodiment of the present invention, the light emitting diode comprises: a support substrate; a first conductive semiconductor layer arranged on the upper part of the support substrate; a mesa including an act...

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Main Authors YOU JONG KYUN, LEE MI HEE, KIM CHANG YOUN, PARK JU YONG, LEE JOON HEE
Format Patent
LanguageEnglish
Korean
Published 25.07.2018
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Abstract Provided is a vertical light emitting diode having a mesa having a groove. According to an embodiment of the present invention, the light emitting diode comprises: a support substrate; a first conductive semiconductor layer arranged on the upper part of the support substrate; a mesa including an active layer and a second conductive semiconductor layer, positioned under a partial region of the first conductive semiconductor layer to expose the edge of the first conductive semiconductor layer, and including a groove exposing the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer; a first electrode arranged between the second conductive semiconductor layer and the support substrate, and including a first contact part electrically connected to the first conductive semiconductor layer around the mesa and a second contact part electrically connected to the first conductive semiconductor layer through the groove; a second electrode arranged between the first electrode and the second conductive semiconductor layer, and electrically connected to the second conductive semiconductor layer; and an upper electrode pad connected to the second electrode adjacent to the first conductive semiconductor layer, wherein the groove surrounds a region including the center of the mesa and is partially opened. 그루브를 구비하는 메사를 가지는 수직형 발광 다이오드가 제공된다. 일 실시예에 따른 발광 다이오드는, 지지기판; 지지기판 상부에 배치된 제1 도전형 반도체층; 활성층 및 제2 도전형 반도체층을 포함하고, 제1 도전형 반도체층의 가장자리를 노출시키도록 제1 도전형 반도체층의 일부 영역 하부에 위치하며, 제2 도전형 반도체층 및 활성층을 통해 제1 도전형 반도체층을 노출시키는 그루브를 포함하는 메사; 제2 도전형 반도체층과 지지기판 사이에 배치되되, 메사 주위에서 제1 도전형 반도체층에 전기적으로 접속된 제1 콘택부 및 그루브를 통해 제1 도전형 반도체층에 전기적으로 접속된 제2 콘택부를 포함하는 제1 전극; 제1 전극과 제2 도전형 반도체층 사이에 배치되어 제2 도전형 반도체층에 전기적으로 접속된 제2 전극; 및 제1 도전형 반도체층에 인접하여 제2 전극에 접속하는 상부 전극 패드를 포함하고, 그루브는 메사의 중심을 포함하는 영역을 둘러싸되 일부가 오픈된 형상을 갖는다.
AbstractList Provided is a vertical light emitting diode having a mesa having a groove. According to an embodiment of the present invention, the light emitting diode comprises: a support substrate; a first conductive semiconductor layer arranged on the upper part of the support substrate; a mesa including an active layer and a second conductive semiconductor layer, positioned under a partial region of the first conductive semiconductor layer to expose the edge of the first conductive semiconductor layer, and including a groove exposing the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer; a first electrode arranged between the second conductive semiconductor layer and the support substrate, and including a first contact part electrically connected to the first conductive semiconductor layer around the mesa and a second contact part electrically connected to the first conductive semiconductor layer through the groove; a second electrode arranged between the first electrode and the second conductive semiconductor layer, and electrically connected to the second conductive semiconductor layer; and an upper electrode pad connected to the second electrode adjacent to the first conductive semiconductor layer, wherein the groove surrounds a region including the center of the mesa and is partially opened. 그루브를 구비하는 메사를 가지는 수직형 발광 다이오드가 제공된다. 일 실시예에 따른 발광 다이오드는, 지지기판; 지지기판 상부에 배치된 제1 도전형 반도체층; 활성층 및 제2 도전형 반도체층을 포함하고, 제1 도전형 반도체층의 가장자리를 노출시키도록 제1 도전형 반도체층의 일부 영역 하부에 위치하며, 제2 도전형 반도체층 및 활성층을 통해 제1 도전형 반도체층을 노출시키는 그루브를 포함하는 메사; 제2 도전형 반도체층과 지지기판 사이에 배치되되, 메사 주위에서 제1 도전형 반도체층에 전기적으로 접속된 제1 콘택부 및 그루브를 통해 제1 도전형 반도체층에 전기적으로 접속된 제2 콘택부를 포함하는 제1 전극; 제1 전극과 제2 도전형 반도체층 사이에 배치되어 제2 도전형 반도체층에 전기적으로 접속된 제2 전극; 및 제1 도전형 반도체층에 인접하여 제2 전극에 접속하는 상부 전극 패드를 포함하고, 그루브는 메사의 중심을 포함하는 영역을 둘러싸되 일부가 오픈된 형상을 갖는다.
Author KIM CHANG YOUN
LEE JOON HEE
LEE MI HEE
PARK JU YONG
YOU JONG KYUN
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Snippet Provided is a vertical light emitting diode having a mesa having a groove. According to an embodiment of the present invention, the light emitting diode...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title VERTICAL TYPE LIGHT EMITTING DIODE
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