METHOD FOR DRYING SUBSTRATE

Disclosed is a method for effectively drying a substrate. The method comprises the following steps: positioning a substrate in a process chamber; supplying a supercritical fluid to an interior space of the process chamber until the internal pressure of the process chamber is higher than the critical...

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Bibliographic Details
Main Authors LEE KUNTACK, KO YONGSUN, LEE HYOSAN, JUN YONGMYUNG, CHO YONG JHIN, KIM SEOKHOON, KIM KYOUNGSEOB, KIM KWANGSU
Format Patent
LanguageEnglish
Korean
Published 10.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a method for effectively drying a substrate. The method comprises the following steps: positioning a substrate in a process chamber; supplying a supercritical fluid to an interior space of the process chamber until the internal pressure of the process chamber is higher than the critical pressure of a supercritical fluid; and supplying the supercritical fluid to the substrate when the internal pressure of the process chamber is higher than the critical pressure of the supercritical fluid. 기판 건조 방법이 개시된다. 기판 건조 방법은 기판을 공정 챔버 내에 위치시키는 단계; 상기 공정 챔버의 내부 압력이 초임계 유체의 임계 압력보다 높아질 때까지 상기 공정 챔버의 내부 공간으로 초임계 유체를 공급하는 단계; 및 상기 공정 챔버의 내부 압력이 상기 초임계 유체의 임계 압력보다 높아지면 상기 기판으로 상기 초임계 유체를 공급하는 단계를 포함한다.
Bibliography:Application Number: KR20180075270