METHOD OF MANUFACTURING FOR TWO-DIMENSIONAL TIN DISULFIDE THIN FILM

• Main Authors: BAEK, SEUNG HYUB, KIM, SEONG KEUN, PYEON, JUNG JOON, KWON, BEOM JIN, CHOI, JI WON, KIM, JIN SANG, KANG, CHONG YUN
• Format: Patent
• Language: English; Korean
• Published: 28.06.2018
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method for forming a two-dimensional tin disulfide thin film. The method for forming a two-dimensional tin disulfide thin film comprises the steps of: forming a tin oxide thin film on a substrate; and sulfurating the tin oxide thin film. The method for forming a two-dimensional tin disulfide thin film according to the present invention can control the number and thickness of tin sulfide thin films, and form tin disulfide thin films with high purity, which are uniform in a large area. Moreover, the method for forming a two-dimensional tin disulfide thin film can form tin disulfide thin films having a thickness of sub-nanometers. 본 발명은 기판 상에 산화주석 박막을 형성하는 단계 및 산화주석 박막을 황화처리하는 단계를 포함하는 이황화주석 박막 형성 방법에 관한 것이다.