SPUTTERING TARGET AND THIN FILM FORMED BY USING THE SAME

• Main Authors: LEE, SEUNG YI, YANG, SEUNG HO, HWANG, BYUNG JIN, PARK, JOO HYEON
• Format: Patent
• Language: English; Korean
• Published: 21.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; METALLURGY; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a sputtering target having low resistivity, and a transparent conductive thin film formed therefrom, wherein the thin film is an amorphous thin film formed from the sputtering target, which exhibits low resistance and improves high light transmittance and high-temperature crystallization characteristics. The sputtering target comprises a sintered body comprising a compound represented by In_2O_3(ZnO)_m (m is an integer of 2-7) and an oxide having a +3 or more valent element, has a +3 or more valent element atomic amount of 1.5-5 atom% on the basis of the total atomic amount, and has resistivity of 1.80 × 10^(-4) to 5.0 × 10^(-4) Ω·cm. 본 발명은 비저항이 낮은 스퍼터링 타겟 및 이로부터 형성된 투명 전도성 박막에 관한 것으로서, 본 발명의 박막은 상기 스퍼터링 타겟으로부터 형성된 비정질 박막이므로, 낮은 저항을 나타냄과 동시에 높은 광투과율 및 고온 결정화 특성을 개선할 수 있다.