MANUFACTURING METHOD FOR TRANSPARENT CONDUCTIVE FILM SPUTTERING DEVICE AND SPUTTERING TARGET

• Main Authors: KIYOTA JUNYA, KOBAYASHI MOTOSHI, AKAMATSU YASUHIKO, YUKAWA TOMIYUKI, MASUZAWA KENJI, TAKEI MASAKI, ISHIBASHI SATORU
• Format: Patent
• Language: English; Korean
• Published: 11.06.2018
• Subjects: ADHESIVES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

[과제] 수증기를 이용하지 않고, 양호한 에칭 특성 및 도전 특성을 가지는 투명 도전막을 형성할 수 있는, 투명 도전막의 제조 방법을 제공한다. [해결 수단] 본 발명의 한 형태와 관련되는 투명 도전막의 제조 방법은, 산화 인듐으로 이루어진 제1의 성분과, 산화 주석으로 이루어진 제2의 성분과, La, Nd, Dy, Eu, Gd, Tb, Zr, Al, Si, Ti 및 B 중에서 선택되는 적어도 1종의 원소 또는 그 산화물로 이루어진 제3의 성분을 포함한 타겟 재료를 스퍼터링하는 것으로, 기판 상에 인듐 주석 산화물 박막을 형성하는 공정과, 상기 인듐 주석 산화물 박막을 에칭액으로 패터닝 하는 공정과, 상기 인듐 주석 산화물 박막을 열처리에 의해서 결정화하는 공정을 가진다. 이것에 의해, 성막 직후의 ITO 막이 약산으로 에칭 가능하게 되어, 또, 상기 ITO 막에 소망한 도전 특성을 부여할 수 있다. Disclosed is a transparent conductive film manufacturing method which enables the formation of a transparent conductive film having excellent etching properties and conductivity, without using water vapour. The disclosed manufacturing method for a transparent conductive film comprises a step wherein an indium tin oxide thin film is formed on a substrate by sputtering a target material containing a first component which is formed from indium oxide, a second component which is formed from tin oxide, and a third component which is formed from at least one element, or the oxide thereof, selected from among La, Nd, Dy, Eu, Gd, Tb, Zr, Al, Si, Ti, and B. The method further comprises a step wherein the indium tin oxide thin film is patterned using an etching solution, and a step wherein the indium tin oxide thin film is crystalised by means of heat treatment. Due to the above method the ITO film can be etched by a weak acid immediately after film formation and a desired conductivity can be imparted to the ITO film.