SEMICONDUCTOR DEVICE

An embodiment of the present invention provides a semiconductor device which includes a substrate including an active region, a gate structure disposed in the active region, source/drain regions formed in the active region on both sides of the gate structure, respectively, a metal silicide film disp...

Full description

Saved in:
Bibliographic Details
Main Authors SHIN, DONG SUK, KIM, SEOK HOON, KIM, GYEOM, YOO, JEONG HO, KIM, JIN BUM, KIM, SUN JUNG, PARK, TAE JIN, LEE, HYUN JUNG, LEE, CHO EUN
Format Patent
LanguageEnglish
Korean
Published 17.05.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An embodiment of the present invention provides a semiconductor device which includes a substrate including an active region, a gate structure disposed in the active region, source/drain regions formed in the active region on both sides of the gate structure, respectively, a metal silicide film disposed on the surfaces of the source/drain regions and composed of a monocrystalline structure, and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide film. Accordingly, the present invention can improve reliability and electrical characteristics. 본 발명의 일 실시예는, 활성 영역을 갖는 기판과, 상기 활성 영역에 배치된 게이트 구조물과, 상기 게이트 구조물의 양측에 위치한 상기 활성 영역 내에 각각 형성된 소스/드레인 영역들과, 상기 소스/드레인 영역들의 표면에 배치되며 단결정 구조(monocrytalline structure)로 이루어진 금속 실리사이드막과, 상기 소스/드레인 영역들 상에 배치되며 상기 금속 실리사이드막을 통해 상기 소스/드레인 영역들에 각각 전기적으로 연결된 콘택 플러그들을 포함하는 반도체 장치를 제공한다.
Bibliography:Application Number: KR20160148684