METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

• Main Authors: TSUCHIYA KEITARO, GOTO HIROKAZU, SHIKAUCHI HIROSHI, SATO KEN, HAGIMOTO KAZUNORI, SHINOMIYA MASARU
• Format: Patent
• Language: English; Korean
• Published: 16.05.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

본 발명은, III족 원소 원료가스 및 V족 원소 원료가스가 도입되는 반응로 내에서 III-V족 질화물 반도체의 다층막을 성장시키는 질화물 반도체 장치의 제조방법으로서, V족 원소 원료가스의 제1의 원료가스 유량 및 제1의 캐리어 가스 유량으로 제1의 질화물 반도체층을 성장시키는 단계와, V족 원소 원료가스의 제1의 원료가스 유량보다 적은 제2의 원료가스 유량 및 제1의 캐리어 가스 유량보다 많은 제2의 캐리어 가스 유량으로, 제2의 질화물 반도체층을 성장시키는 단계를 포함하고, 제1의 질화물 반도체층과 제2의 질화물 반도체층을 적층하는 것을 특징으로 하는 질화물 반도체 장치의 제조방법이다. 이에 따라, III-V족 질화물 반도체층의 적층 구조체를, 각 층에 적합한 V/III비로 성장시키는 질화물 반도체 장치의 제조방법이 제공된다. The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.