Method for inspecting pattern and reticle manufacturing method using the same

Disclosed are a pattern inspection method and a reticle production method using the same. The pattern inspection method comprises the following steps: forming thin film patterns on a substrate; forming a first discharge layer on the thin film patterns; and applying a first charged particle beam pene...

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Bibliographic Details
Main Authors KIM, EOK BONG, CHOI, JIN SUNG, KIM, MUN JA, SON, KI JUNG
Format Patent
LanguageEnglish
Korean
Published 15.05.2018
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Summary:Disclosed are a pattern inspection method and a reticle production method using the same. The pattern inspection method comprises the following steps: forming thin film patterns on a substrate; forming a first discharge layer on the thin film patterns; and applying a first charged particle beam penetrating the first discharge layer so as to measure the thin film patterns. The first discharge layer connects the thin film patterns and can be separated from the substrate between the thin film patterns. The discharged thin film patterns are able to prevent deflection of the first charged particle beam. 본 발명은 패턴 검사 방법 및 그를 사용한 레티클 제조 방법을 개시한다. 그의 검사 방법은, 기판 상에 박막 패턴들을 형성하는 단계와, 박막 패턴들 상에 제 1 방전 층을 형성하는 단계와, 제 1 방전 층을 투과하는 제 1 하전 입자 빔을 제공하여 박막 패턴들을 측정하는 단계를 포함한다. 제 1 방전 층은 박막 패턴들 사이를 연결하고, 박막 패턴들 사이의 기판으로부터 분리될 수 있다.
Bibliography:Application Number: KR20160146376