SiC MANUFACTURING APPARATUS FOR SIC SINGLE CRYSTAL
The present invention provides a manufacturing device of a silicon carbide (SiC) single crystal which manufactures a SiC single crystal by using an adapter adjusting a rotational eccentricity of a seed shaft while preventing overheating and thermal deformation of the seed shaft. The manufacturing de...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
04.05.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The present invention provides a manufacturing device of a silicon carbide (SiC) single crystal which manufactures a SiC single crystal by using an adapter adjusting a rotational eccentricity of a seed shaft while preventing overheating and thermal deformation of the seed shaft. The manufacturing device of a SiC single crystal comprises: an upper seed shaft of a first thermal conductive material connected to a seed driving unit at an upper part thereof; a lower seed shaft of a second thermal conductive material having a lower thermal conductivity than a first thermal conductivity having a lower part to which a SiC seed is attached; and the seed shaft composed of the adapter connecting the upper and lower seed shafts.
본 발명은 시드축의 과열과 열변형을 방지하면서 시드축의 회전편심을 조절하는 어댑터를 이용하여 SiC 단결정을 제조하는 SiC 단결정 제조장치를 제공한다. |
---|---|
Bibliography: | Application Number: KR20160139060 |