SiC MANUFACTURING APPARATUS FOR SIC SINGLE CRYSTAL

• Main Authors: LEE, HEE TAE, KANG, JIN KI, KIM, JUNG GON
• Format: Patent
• Language: English; Korean
• Published: 04.05.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention provides a manufacturing device of a silicon carbide (SiC) single crystal which manufactures a SiC single crystal by using an adapter adjusting a rotational eccentricity of a seed shaft while preventing overheating and thermal deformation of the seed shaft. The manufacturing device of a SiC single crystal comprises: an upper seed shaft of a first thermal conductive material connected to a seed driving unit at an upper part thereof; a lower seed shaft of a second thermal conductive material having a lower thermal conductivity than a first thermal conductivity having a lower part to which a SiC seed is attached; and the seed shaft composed of the adapter connecting the upper and lower seed shafts. 본 발명은 시드축의 과열과 열변형을 방지하면서 시드축의 회전편심을 조절하는 어댑터를 이용하여 SiC 단결정을 제조하는 SiC 단결정 제조장치를 제공한다.