Method for removal of polymer residues on a graphene film

The present invention provides a method for removing a residue on a graphene surface of a graphene element. More specifically, when manufacturing an element using graphene, the present invention comprises a step of electrochemically processing the graphene element. Residual impurities formed on the...

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Bibliographic Details
Main Author PARK, BYOUNG CHOO
Format Patent
LanguageEnglish
Korean
Published 30.04.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a method for removing a residue on a graphene surface of a graphene element. More specifically, when manufacturing an element using graphene, the present invention comprises a step of electrochemically processing the graphene element. Residual impurities formed on the graphene of the graphene element when manufacturing the graphene element can be effectively removed within a short time by applying an electrochemical processing method. 본 발명의 목적은 그래핀 소자의 그래핀 표면의 잔여물을 제거하는 방법을 제공하는 것이다. 구체적으로, 그래핀을 사용하여 소자를 제작하는 경우, 그래핀 소자를 전기화학 처리하는 단계를 포함한다. 그래핀 소자 제조 시에 전기화학 처리 방식을 적용하여 짧은 시간 동안에 그래핀 소자의 그래핀 상에 형성된 잔여 불순물 등을 효과적으로 제거할 수 있다.
Bibliography:Application Number: KR20160136179