SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: CHAO CHA HSIN, HER JENG CHANG, CHIU YI WEI, HSU LI TE, HSIA YING TING
• Format: Patent
• Language: English; Korean
• Published: 04.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In a method of manufacturing a semiconductor device, a first interlayer dielectric layer is formed on a substrate. A first concave part is formed in the first interlayer dielectric layer. A first metal line is formed in a first concave part. A first etching resistance layer is formed on the surface...