SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In a method of manufacturing a semiconductor device, a first interlayer dielectric layer is formed on a substrate. A first concave part is formed in the first interlayer dielectric layer. A first metal line is formed in a first concave part. A first etching resistance layer is formed on the surface...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
04.04.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In a method of manufacturing a semiconductor device, a first interlayer dielectric layer is formed on a substrate. A first concave part is formed in the first interlayer dielectric layer. A first metal line is formed in a first concave part. A first etching resistance layer is formed on the surface of the first interlayer dielectric layer in the first metal line but not on the upper surface of the first metal line. A first insulating layer is formed on the upper surface of the first etching resistance layer and the first metal line. It is possible to improve the reliability of the semiconductor device.
반도체 디바이스를 제조하는 방법에 있어서, 제1 층간 유전체층이 기판 위에 형성된다. 제1 오목부가 제1 층간 유전체층에 형성된다. 제1 금속 배선이 제1 오목부에 형성된다. 제1 내에칭층이 제1 금속 배선 사이의 제1 층간 유전체층의 표면에는 형성되지만 제1 금속 배선의 상부 표면 상에는 형성되지 않는다. 제1 절연층이 제1 내에칭층 및 제1 금속 배선의 상부 표면 상에 형성된다. |
---|---|
Bibliography: | Application Number: KR20170110736 |