SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure relates to a semiconductor light emitting device. It includes a semiconductor light emitting device chip which comprises a plurality of semiconductor layers including an active layer for generating light by the recombination of electrons and holes, and an electrode electricall...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
13.02.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The present disclosure relates to a semiconductor light emitting device. It includes a semiconductor light emitting device chip which comprises a plurality of semiconductor layers including an active layer for generating light by the recombination of electrons and holes, and an electrode electrically connected to the plurality of semiconductor layers; a first encapsulant of light transmission which is disposed on the semiconductor light emitting device chip, has a downward convex upper surface, and includes a cavity surrounded by the first encapsulant; and a second encapsulant of light transmission which is formed in the cavity of the first encapsulant, and has a convex upper surface. It is possible to choose various colors and light reflectance.
본 개시는 반도체 발광소자에 있어서, 반도체 발광소자 칩;으로서, 전자와 정공의 재결합에 의해 빛을 생성하는 활성층을 포함하는 복수의 반도체층과, 복수의 반도체층에 전기적으로 연결된 전극을 구비하는 반도체 발광소자 칩; 반도체 발광소자 칩 위에 위치하는 투광성의 제1 봉지재;로서 제1 봉지재의 상면이 아래로 볼록하여 제1 봉지재에 의해 둘러싸인 캐비티(cavity)를 포함하는 제1 봉지재; 그리고 제1 봉지재의 캐비티 내에 형성되는 투광성의 제2 봉지재;로서 제2 봉지재의 상면이 위로 볼록한 제2 봉지재;를 포함하는 것을 특징으로 하는 반도체 발광소자 및 이의 제조 방법에 관한 것이다. |
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Bibliography: | Application Number: KR20160081515 |