METHOD FOR PRODUCING A SUPERJUNCTION DEVICE

Disclosed is a method which comprises a step of forming a plurality of semiconductor arrangements by overlapping one another. In the method, the step of forming each of the plurality of semiconductor arrangements includes the steps of: forming a semiconductor layer; forming a plurality of trenches o...

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Main Authors MAUDER ANTON, VOERCKEL ANDREAS, TUTUC DANIEL, TREIBER MAXIMILIAN, SCHUSTEREDER WERNER, HIRLER FRANZ, SCHULZE HANS JOACHIM, WEBER HANS, LAVEN JOHANNES GEORG
Format Patent
LanguageEnglish
Korean
Published 24.01.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a method which comprises a step of forming a plurality of semiconductor arrangements by overlapping one another. In the method, the step of forming each of the plurality of semiconductor arrangements includes the steps of: forming a semiconductor layer; forming a plurality of trenches on a first surface of the semiconductor layer; and injecting at least one of first and second types of dopant atoms into either a first sidewall or a second sidewall of each of the plurality of trenches of the semiconductor layer. 서로 중첩해서 복수의 반도체 어레인지먼트를 형성하는 단계를 포함하는 방법이 개시된다. 이 방법에서, 복수의 반도체 어레인지먼트 각각을 형성하는 단계는, 반도체 층을 형성하는 단계와, 상기 반도체 층의 제 1 표면에 복수의 트렌치를 형성하는 단계와, 상기 반도체 층의 상기 복수의 트렌치 각각의 제 1 측면과 제 2 측면 중 하나에, 제 1 타입과 제 2 타입 중 적어도 하나의 도펀트 원자를 주입하는 단계를 포함한다.
Bibliography:Application Number: KR20170089021