Aluminum compound and methods of forming thin film and integrated circuit device

The present invention provides an aluminum compound represented by general formula of the present invention, a method of forming a thin film using the same, and a manufacturing method of an integrated circuit device using the same. An objective of the present invention is to provide an aluminum comp...

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Bibliographic Details
Main Authors CHO, YOUN JOUNG, PARK, GYU HEE, LIM, JAE SOON
Format Patent
LanguageEnglish
Korean
Published 24.01.2018
Subjects
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides an aluminum compound represented by general formula of the present invention, a method of forming a thin film using the same, and a manufacturing method of an integrated circuit device using the same. An objective of the present invention is to provide an aluminum compound capable of suppressing the inclusion of undesired impurities when forming a thin film containing aluminum, and capable of providing excellent thermal stability, process stability, and mass productivity. 다음 일반식의 알루미늄 화합물과, 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법을 제공한다.
Bibliography:Application Number: KR20160089206