Operation method of memory controller for controlling non-volatile memory device with refresh read

Disclosed is an operation method of a memory controller for controlling a nonvolatile memory device performing a refresh read operation. The memory controller issues a refresh read command by sensing power-up or power-down of the nonvolatile memory device. A nonvolatile memory device receiving the r...

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Bibliographic Details
Main Authors LEE, JOON HO, CHOI, HYUN JIN, CHANG, SIL WAN, HAM, DONG HOON
Format Patent
LanguageEnglish
Korean
Published 29.11.2017
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Disclosed is an operation method of a memory controller for controlling a nonvolatile memory device performing a refresh read operation. The memory controller issues a refresh read command by sensing power-up or power-down of the nonvolatile memory device. A nonvolatile memory device receiving the refresh read command is controlled to perform the refresh read operation including a read operation on one of a plurality of word lines in each memory block one time. Accordingly, the method prevents a data loss through the refresh read operation of the nonvolatile memory device. 리프레쉬 리드 동작을 수행하는 불휘발성 메모리 장치를 제어하는 메모리 콘트롤러의 동작 방법에 대하여 개시된다. 메모리 콘트롤러는 불휘발성 메모리 장치의 파워 업 또는 파워 다운을 감지하여 리프레쉬 리드 커맨드를 발행한다. 리프레쉬 리드 커맨드를 수신하는 불휘발성 메모리 장치에서는 메모리 블록 각각에서 복수의 워드라인들 중 하나에 대하여 읽기 동작을 포함하는 리프레쉬 리드 동작이 1회 수행되도록 제어된다.
Bibliography:Application Number: KR20160061431