MANGANESE BARRIER AND ADHESION LAYERS FOR COBALT

According to a specification, provided are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film ca...

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Bibliographic Details
Main Authors NA, JEONG SEOK, HUMAYUN RAASHINA, ASHTIANI KAIHAN ABIDI, LAI CHIUKIN STEVEN, DANEK MICHAL
Format Patent
LanguageEnglish
Korean
Published 22.11.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to a specification, provided are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film can be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate. 도전성 코발트 (Co) 상호접속부들 및 Co 피처들을 형성하는 방법들이 본 명세서에 제공된다. 방법들은 유전체 상의 박형 망간 (Mn)-함유 막의 증착 이어서 Mn-함유 막 상의 코발트의 후속 증착을 수반한다. Mn-함유 막은 실리콘 다이옥사이드와 같은 실리콘-함유 유전체 상에 증착될 수도 있고, 망간 실리케이트를 형성하도록 어닐링될 수도 있다.
Bibliography:Application Number: KR20170058543