InGaAs/InP MESA-TYPE PHOTODIODE AND MANUFACTURING METHOD THEREOF

• Main Authors: NOH, IN SEOB, BAEK, SEUNG MIN, KIM, YOUNG JUN, CHOI, JONG HWA, YANG, KYOUNG HOON, KIM, NAM HWAN
• Format: Patent
• Language: English; Korean
• Published: 22.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

According to the present invention, a method for manufacturing a mesa-type indium gallium arsenide (InGaAs)/indium phosphide (InP) photodiode comprises the steps of: forming an etch mask layer to etch an active layer and a light absorption layer stacked on a substrate; etching the active layer and the light absorption layer to generate a plurality of active regions spaced apart from each other; performing a thermal process; stacking a surface protective film; forming the etch mask layer to etch the surface protective film; etching the surface protective film; and forming an electrode between the etched surface protective films. According to the present invention, the mesa type InGaAs/InP photodiode having low dark current characteristics can be manufactured through a simple manufacturing process. 본원발명에 따르면, 기판(substrate)에 적층된 활성층 및 광 흡수층을 식각하기 위해 식각 마스크층을 형성시키는 단계; 서로 이격 형성된 복수의 활성 영역이 생성되도록, 상기 활성층 및 광 흡수층을 식각하는 단계; 열처리 공정을 거치는 단계; 표면 보호막을 적층시키는 단계; 상기 표면 보호막을 식각하기 위해 식각 마스크층을 형성시키는 단계; 상기 표면 보호막을 식각하는 단계; 및 식각된 상기 표면 보호막의 사이에 전극을 형성시키는 단계로 이루어지는 메사형 InGaAs/InP 포토 다이오드의 제조 방법이 제공될 수 있다. 본원발명에 따르면, 간단한 제조 공정을 통하여 낮은 암전류 특성을 가지는 메사형 InGaAs/InP 포토 다이오드를 제조할 수 있다.