레지스트 제거액, 레지스트 제거 방법, 재생 반도체 기판의 제조 방법

• Main Authors: OKAWARA TAKAHIRO, MURAYAMA SATORU, MIZUTANI ATSUSHI
• Format: Patent
• Language: Korean
• Published: 21.11.2017
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CANDLES; CHEMISTRY; CINEMATOGRAPHY; DETERGENT COMPOSITIONS; DETERGENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; FATTY ACIDS THEREFROM; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; RECOVERY OF GLYCEROL; RESIN SOAPS; SEMICONDUCTOR DEVICES; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

본 발명의 과제는, 각종 레지스트의 제거가 우수한 레지스트 제거액과, 이를 이용한 레지스트 제거 방법 및 재생 반도체 기판의 제조 방법을 제공하는 것이다. 본 발명의 레지스트 제거액은, 제4급 암모늄 화합물을 함유하는 레지스트 제거액으로서, 상기 제4급 암모늄 화합물이, 탄소수의 합계가 8 이하인 제4급 암모늄 화합물 A와, 탄소수의 합계가 9 이상인 제4급 암모늄 화합물 B를 포함한다. The present invention addresses the problem of providing a resist remover liquid that is highly effective in removing various resists, a resist removal method in which the resist remover liquid is used, and a process for producing a regenerated semiconductor substrate. The resist remover liquid according to the present invention contains quaternary ammonium compounds, the quaternary ammonium compounds comprising quaternary ammonium compound A having eight or less carbon atoms in total and quaternary ammonium compound B having nine or more carbon atoms in total.