METHODS OF ENCAPSULATION
Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300C. are provided in the present specification. The methods involve the steps of: pulsing plasma while exposing a substrate to deposition reactants; and post-tre...
Saved in:
| Main Authors | , , , , , , |
|---|---|
| Format | Patent |
| Language | English Korean |
| Published |
15.11.2017
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300C. are provided in the present specification. The methods involve the steps of: pulsing plasma while exposing a substrate to deposition reactants; and post-treating deposited encapsulation films to densify and reduce hydrogen content. The post-treating methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300C.
약 300 ℃ 미만의 온도들에서 저 수소 함량의, 밀봉된, 박형 캡슐화 층들을 증착하기 적합한 방법들 및 장치들이 본 명세서에 제공된다. 방법들은 증착 반응물질들에 기판을 노출하는 동안 플라즈마를 펄싱하는 단계, 및 치밀화하고 수소 함량을 감소시키도록 증착된 캡슐화 막들을 후-처리하는 단계를 수반한다. 후-처리 방법들은 약 300 ℃ 미만의 기판 온도에서 반응물질들이 없는 불활성 플라즈마로의 주기적 노출 및 자외선 복사로의 노출을 포함한다. |
|---|---|
| AbstractList | Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300C. are provided in the present specification. The methods involve the steps of: pulsing plasma while exposing a substrate to deposition reactants; and post-treating deposited encapsulation films to densify and reduce hydrogen content. The post-treating methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300C.
약 300 ℃ 미만의 온도들에서 저 수소 함량의, 밀봉된, 박형 캡슐화 층들을 증착하기 적합한 방법들 및 장치들이 본 명세서에 제공된다. 방법들은 증착 반응물질들에 기판을 노출하는 동안 플라즈마를 펄싱하는 단계, 및 치밀화하고 수소 함량을 감소시키도록 증착된 캡슐화 막들을 후-처리하는 단계를 수반한다. 후-처리 방법들은 약 300 ℃ 미만의 기판 온도에서 반응물질들이 없는 불활성 플라즈마로의 주기적 노출 및 자외선 복사로의 노출을 포함한다. |
| Author | SINGHAL AKHIL WEI JOSEPH HUNG CHI MCLAUGHLIN KEVIN M VARADARAJAN BHADRI N BANERJI ANANDA K VAN SCHRAVENDIJK BART J HOLDER CASEY |
| Author_xml | – fullname: HOLDER CASEY – fullname: VARADARAJAN BHADRI N – fullname: WEI JOSEPH HUNG CHI – fullname: SINGHAL AKHIL – fullname: BANERJI ANANDA K – fullname: MCLAUGHLIN KEVIN M – fullname: VAN SCHRAVENDIJK BART J |
| BookMark | eNrjYmDJy89L5WSQ8HUN8fB3CVbwd1Nw9XN2DAgO9XEM8fT342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgaG5gaGRqbmxgaOxsSpAgBHRyJQ |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| DocumentTitleAlternate | 캡슐화 방법 |
| ExternalDocumentID | KR20170125730A |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_KR20170125730A3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Aug 30 05:41:19 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English Korean |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_KR20170125730A3 |
| Notes | Application Number: KR20170056225 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171115&DB=EPODOC&CC=KR&NR=20170125730A |
| ParticipantIDs | epo_espacenet_KR20170125730A |
| PublicationCentury | 2000 |
| PublicationDate | 20171115 |
| PublicationDateYYYYMMDD | 2017-11-15 |
| PublicationDate_xml | – month: 11 year: 2017 text: 20171115 day: 15 |
| PublicationDecade | 2010 |
| PublicationYear | 2017 |
| RelatedCompanies | LAM RESEARCH CORPORATION |
| RelatedCompanies_xml | – name: LAM RESEARCH CORPORATION |
| Score | 3.076948 |
| Snippet | Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300C. are provided in... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | ELECTRICITY |
| Title | METHODS OF ENCAPSULATION |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171115&DB=EPODOC&locale=&CC=KR&NR=20170125730A |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsUwyTgZnJMNkYCY3SU0y17VMTQP2UkyBlX9KqmlqigFoo7Cvn5lHqIlXhGkEE0MObC8M-JzQcvDhiMAclQzM7yXg8roAMYjlAl5bWayflAkUyrd3C7F1UYP2jg3NgVnXVM3FydY1wN_F31nN2dnWO0jNLwgsByyLTYEJ2pGZgRXYkDYHd9vCnED7UgqQKxU3QQa2AKB5eSVCDEzZ-cIMnM6wu9eEGTh8oVPeQCY09xWLMEj4uoZ4-LsEK_i7Kbj6OTsGBIf6gIeYRBmU3VxDnD10gVbEw30U7x2E7B5jMQYWYF8_VYJBwTQl2cA81djSOMnEENQ3STJJM0pOMTRJMTVPszC1TJVkkMFnkhR-aWkGLhAXtJXO0FSGgaWkqDRVFlinliTJgYMCAL5VdgA |
| link.rule.ids | 230,309,783,888,25577,76883 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOebTmXq1ILSt-G6NnZ9KLKlLdV-0nWyt0LaFERxw1X8972GTve0t5CDywf53eV3ySUA9wZTcwEkJUeQa5zpA4OXyFIIOv-CE14M60ThIHx059rLgixa8LHJhRHvhP6IxxERUTnivRL2evUfxLLE3cr1A3vDquWTk5qW3LBjRUfoEtmamnYcWRGVKTW9RA4TIUNbTHBBT_ZgHzfZY0GWXqd1Xspq26k4x3AQo77P6gRa78sudOjm77UuHAbNkTcWG_StT6EX2KkbWTMpciQ7pJN4NvdFiOkM7hw7pe4Am8j-RpR5yXZ_1HNoI9fnPZBIkQ91rhoq05SamzCtHOWFohVEL8fE4BfQ36Xpcrf4FjpuGviZ_xx6V3BUi-q0OoX0oV19ffNr9K8VuxHT8gtuL3jw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=METHODS+OF+ENCAPSULATION&rft.inventor=HOLDER+CASEY&rft.inventor=VARADARAJAN+BHADRI+N&rft.inventor=WEI+JOSEPH+HUNG+CHI&rft.inventor=SINGHAL+AKHIL&rft.inventor=BANERJI+ANANDA+K&rft.inventor=MCLAUGHLIN+KEVIN+M&rft.inventor=VAN+SCHRAVENDIJK+BART+J&rft.date=2017-11-15&rft.externalDBID=A&rft.externalDocID=KR20170125730A |