METHODS OF ENCAPSULATION

Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300C. are provided in the present specification. The methods involve the steps of: pulsing plasma while exposing a substrate to deposition reactants; and post-tre...

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Main Authors HOLDER CASEY, VARADARAJAN BHADRI N, WEI JOSEPH HUNG CHI, SINGHAL AKHIL, BANERJI ANANDA K, MCLAUGHLIN KEVIN M, VAN SCHRAVENDIJK BART J
Format Patent
LanguageEnglish
Korean
Published 15.11.2017
Subjects
ELECTRICITY
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Summary:Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300C. are provided in the present specification. The methods involve the steps of: pulsing plasma while exposing a substrate to deposition reactants; and post-treating deposited encapsulation films to densify and reduce hydrogen content. The post-treating methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300C. 약 300 ℃ 미만의 온도들에서 저 수소 함량의, 밀봉된, 박형 캡슐화 층들을 증착하기 적합한 방법들 및 장치들이 본 명세서에 제공된다. 방법들은 증착 반응물질들에 기판을 노출하는 동안 플라즈마를 펄싱하는 단계, 및 치밀화하고 수소 함량을 감소시키도록 증착된 캡슐화 막들을 후-처리하는 단계를 수반한다. 후-처리 방법들은 약 300 ℃ 미만의 기판 온도에서 반응물질들이 없는 불활성 플라즈마로의 주기적 노출 및 자외선 복사로의 노출을 포함한다.
Bibliography:Application Number: KR20170056225