SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING APPARATUS

• Main Authors: HAMANO KENICHI, OHNO AKIHITO, KANAZAWA TAKASHI
• Format: Patent
• Language: English; Korean
• Published: 06.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a manufacturing method of a silicon carbide epitaxial wafer, capable of manufacturing a silicon carbide epitaxial wafer having a low crystal defect, a manufacturing method of a silicon carbide semiconductor device and a manufacturing device of a silicon carbide epitaxial wafer. The manufacturing method of a silicon carbide epitaxial wafer comprises the following processes of: nitriding, oxidizing, or oxy-nitriding silicon carbide attached to an inner wall of a growth furnace (1) to stabilize the same; carrying a substrate (2) in the growth furnace (1); and introducing a process gas in the growth furnace (1) and growing a silicon carbide epitaxial layer on the substrate (2), thereby manufacturing the silicon carbide epitaxial wafer. 결정 결함이 적은 탄화규소 에피텍셜 웨이퍼를 제조할 수 있는 탄화규소 에피텍셜 웨이퍼의 제조 방법, 탄화규소 반도체 장치의 제조 방법 및 탄화규소 에피텍셜 웨이퍼의 제조 장치를 얻는다. 성장로(1)의 내벽에 부착된 탄화규소를 질화, 산화 또는 산질화시켜서 안정화시킨다. 다음에, 성장로(1) 내에 기판(2)을 반입한다. 다음에, 성장로(1) 내에 프로세스 가스를 도입하고, 기판(2)상에 탄화규소 에피텍셜층을 성장시켜서 탄화규소 에피텍셜 웨이퍼를 제조한다.