WASHING LIQUID AND WASHING METHOD
Provided are a washing liquid which is excellent in erosion resistance against metals including cobalt as a washing liquid used for removing residues or etching residues of photoresist patterns, and a washing method using the same. Hydrofluoric acid (A), a tetrazole compound (B) and water (C) are co...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
13.09.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Provided are a washing liquid which is excellent in erosion resistance against metals including cobalt as a washing liquid used for removing residues or etching residues of photoresist patterns, and a washing method using the same. Hydrofluoric acid (A), a tetrazole compound (B) and water (C) are contained in the washing liquid. As the tetrazole compound (B), a compound represented by the formula (B1) is preferable. In the formula (B1), R^1 is a hydrogen atom or an organic group, and R^2 is a hydrogen atom, a hydroxyl group, a mercapto group, an amino group, or an organic group.
(과제) 포토레지스트 패턴의 잔사물이나 에칭 잔사물의 제거 등에 사용되는 세정액으로서, 코발트를 포함하는 금속에 대한 방식성이 우수한 세정액, 및 이것을 사용하는 세정 방법을 제공하는 것. (해결 수단) 세정액에 불화수소산 (A), 테트라졸 화합물 (B) 및 물 (C) 를 함유시킨다. 테트라졸 화합물 (B) 로는, 하기 식 (B1) 로 나타내는 화합물이 바람직하다. 식 (B1) 중, R은, 수소 원자 또는 유기기이고, R는 수소 원자, 수산기, 메르캅토기, 아미노기, 또는 유기기이다. [화학식 1] |
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Bibliography: | Application Number: KR20170026650 |