ZIRCONIUM-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF ZIRCONIUM-CONTAINING FILMS

• Main Authors: DUSSARRAT CHRISTIAN, LIEFFRIG JULIEN, ISHII HANA, LANSALOT MATRAS CLEMENT
• Format: Patent
• Language: English; Korean
• Published: 30.08.2017
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

하기 화학식들 중 하나를 갖는 게르마늄- 및 지르코늄-함유 전구체를 포함하는 지르코늄-함유 막 형성 조성물이 개시된다. 또한, 개시된 조성물을 합성하는 방법 및 증기 증착 공정을 통해 기판 상에 지르코늄-함유 막을 증착시키기 위해 이러한 것을 사용하는 방법이 개시된다: [화학식 I][화학식 II]상기 식에서, 각각의 R, R, R, R, R, R, R, R, R및 R은 독립적으로 H; C1-C5 선형, 분지형, 또는 환형 알킬 기; 및 C1-C5 선형, 분지형, 또는 환형 플루오로알킬 기로부터 선택된다. wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.