SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device comprises a substrate, at least one first isolation structure, at least two second isolation structures, and an epitaxy structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semicon...

Full description

Saved in:
Bibliographic Details
Main Authors LI CHII HORNG, TING HENG WEN, SU LILLY, TAI JUNG CHI, LEE YEN RU, LIN TZU CHING, KUO CHIEN I
Format Patent
LanguageEnglish
Korean
Published 25.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device comprises a substrate, at least one first isolation structure, at least two second isolation structures, and an epitaxy structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semiconductor fins are disposed between the second isolation structures, and the second isolation structures are extended into the substrate further than the first isolation structure. The epitaxy structure is disposed on the semiconductor fins. At least one void exists between the first isolation structure and the epitaxy structure. 반도체 디바이스는 기판, 적어도 하나의 제1 격리 구조물, 적어도 2개의 제2 격리 구조물, 및 에피택시 구조물을 포함한다. 기판은 내부에 복수의 반도체 핀들을 가진다. 제1 격리 구조물은 반도체 핀들 사이에 배치된다. 반도체 핀들은 제2 격리 구조물 사이에 배치되며, 제2 격리 구조물들은 기판 안으로 제1 격리 구조물보다 더 깊이 연장된다. 에피택시 구조물은 반도체 핀들 상에 배치된다. 적어도 하나의 보이드는 제1 격리 구조물과 에피택시 구조물 사이에 존재한다.
Bibliography:Application Number: KR20170103168