ETCHING SOLUTION AND PHOTOMASK DEFORMED BY ETCHING SOLUTION

Provided is an etching solution capable of precisely controlling light transmittance in semi-transmittance parts on photomask in the production of the photomask for lithography. Moreover, provided are a method for producing a gray scale mask using the etching solution, and a gray scale mask by the m...

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Bibliographic Details
Main Authors OHWADA TAKUO, ISHIKAWA NAOKI
Format Patent
LanguageEnglish
Korean
Published 23.08.2017
Subjects
ADHESIVES
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
DYES
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
MATERIALS THEREFOR
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
ORIGINALS THEREFOR
PAINTS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
POLISHES
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Summary:Provided is an etching solution capable of precisely controlling light transmittance in semi-transmittance parts on photomask in the production of the photomask for lithography. Moreover, provided are a method for producing a gray scale mask using the etching solution, and a gray scale mask by the method. To this end, the etching solution contains ammonium cerium (IV) nitrate or ammonium cerium (IV) sulfate. [과제] 리소그래피용 포토마스크의 제조에 있어서, 포토 마스크의 반투광부의 광투과율을 정밀하게 제어할 수 있는 에칭액, 해당 에칭액을 사용한 계조 마스크를 제조하는 방법, 및 해당 방법에 의해 제조된 계조 마스크를 제공한다. [해결수단] 질산이암모늄세륨(IV) 또는 황산사세륨(IV)암모늄을 포함하는 에칭액.
Bibliography:Application Number: KR20170020040