Sn Bi Tin or Bismuth doped metal nitride-based red phosphors and light emitting device containing the same

The present invention relates to tin (Sn) or bismuth (Bi) doped metal nitride-based red phosphors emitting red wavelengths by being excited by ultraviolet rays or blue excitation sources, and a light emitting device using the phosphors. The metal nitride-based phosphors of the present invention can...

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Main Authors CHANG, HYUN JU, CHOI, KANG SIK, KIM, CHANG HAE, JANG, SEUNG HUN, BANG, BO GEUK, PARK, JUNE KYU, IM, JIN O, KONG, KI JEONG
Format Patent
LanguageEnglish
Korean
Published 16.08.2017
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Summary:The present invention relates to tin (Sn) or bismuth (Bi) doped metal nitride-based red phosphors emitting red wavelengths by being excited by ultraviolet rays or blue excitation sources, and a light emitting device using the phosphors. The metal nitride-based phosphors of the present invention can be usefully applied for light emitting devices such as light emitting diodes, laser diodes, surface light emitting laser diodes, inorganic electroluminescent devices and organic electroluminescent devices. 본 발명은 자외선 또는 청색의 여기원에 의해 여기되어 적색계 파장을 발광하는, 주석(Sn) 또는 비스무트(Bi)가 도핑 된 금속질화물 적색 형광체 및 이 형광체를 발광소자로 응용하는 것에 관한 것이다. 본 발명의 금속질화물 형광체는 발광다이오드, 레이저다이오드, 면발광 레이저다이오드, 무기 일렉트로루미네센스 소자, 유기 일렉트로루미네센스 소자와 같은 발광소자에 유용하게 적용 될 수 있다.
Bibliography:Application Number: KR20160014561