OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING OXIDE SINTERED BODY

• Main Authors: KURIHARA TOSHIYA, KAKUTA KOJI, YAMAGUCHI YOHEI
• Format: Patent
• Language: English; Korean
• Published: 14.08.2017
• Subjects: ARTIFICIAL STONE; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

인듐 (In), 갈륨 (Ga), 아연 (Zn), 산소 (O) 및 불가피적 불순물로 이루어지는 산화물 소결체로서, 항절 강도가 50 ㎫ 이상, 벌크 저항이 100 mΩ㎝ 이하인 것을 특징으로 하는 IGZO 소결체. DC 스퍼터링에 의한 성막시에 타깃 갈라짐이나 파티클 발생을 저감시켜, 양호한 박막을 형성할 수 있는 스퍼터링 타깃을 제공하는 것을 과제로 한다. An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.