Manufacturing method for mold of Anti-reflection film

• Main Authors: SEO, SANG HYUN, LEE, KYU MAN, CHAE, JOO HYUN
• Format: Patent
• Language: English; Korean
• Published: 10.08.2017
• Subjects: AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PERFORMING OPERATIONS; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR; SHAPING OR JOINING OF PLASTICS; TRANSPORTING; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

The present invention discloses a method for manufacturing a mold for an anti-reflection film which increases anodic oxidation efficiency and forming a uniform nanostructure. The present invention comprises the following steps: preparing a stamper made of aluminum; (S3) forming starting grooves in which anodization starts by pressing a substrate having a plurality of particles arranged on one side against the outer surface of the stamper; forming a porous pore forming the engraved surface by performing anodization on the stamper having the starting grooves formed therein, thereby adjusting the gaps of the starting grooves by adjusting the size of particles arranged on one side of the substrate. 본 발명은 양극산화 효율을 증가시키고 균일한 나노구조체의 형성이 가능한 반사방지필름용 몰드 제조방법을 개시한다. 본 발명은 알루미늄으로 이루어진 스템퍼를 준비하는 준비단계와, 일측면에 다수개의 입자가 정렬된 기판을 상기 스템퍼의 외면에 가압하여 양극산화가 시작되는 개시홈을 형성하는 개시홈 형성단계(S3)와, 개시홈이 형성된 상기 스템퍼에 양극산화를 실시하여 음각을 이루는 다공성 포어(pore)를 형성하는 포어 형성단계를 실시하여 상기 기판의 일측면에 정렬되는 입자의 크기를 조절함으로써 상기 개시홈의 간격을 조절하는 것이다.