SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Author: CHOI, KANG SIK
• Format: Patent
• Language: English; Korean
• Published: 03.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are a semiconductor device with improved elimination properties and improved degree of integration, and a manufacturing method thereof. The semiconductor device comprises: a source film; a well pick-up film formed on the source film; a body structure formed on the well pick-up film, and including a well area being in contact with the well pick-up film and first junctions formed on a side wall; a channel pillar being in contact with the body structure, and protruding from the body structure; and a contact film formed on the side wall of the body structure, and electrically connecting the body structure and the well pick-up film. 반도체 장치는 소스막; 상기 소스막 상에 형성된 웰 픽업막; 상기 웰 픽업막 상에 형성되고, 상기 웰 픽업막과 접하는 웰 영역 및 측벽에 형성된 제1 정션들을 포함하는 바디 구조체; 상기 바디 구조체와 접하고, 상기 바디 구조체로부터 돌출된 채널 필라; 및 상기 바디 구조체의 측벽 상에 형성되고, 상기 바디 구조체와 상기 웰 픽업막을 전기적으로 연결시키는 콘택막을 포함한다.