METHOD AND STRUCTURE TO IMPROVE FILM STACK WITH SENSITIVE AND REACTIVE LAYERS

• Main Authors: YE ZHIYUAN, BAO XINYU, BAN KEUN YONG, CARLSON DAVID K, SANCHEZ ERROL ANTONIO C
• Format: Patent
• Language: English; Korean
• Published: 04.07.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

본 개시내용의 실시예들은 일반적으로 Ⅲ-Ⅴ족 반도체 재료들의 층들을 포함하는 필름 스택에 관한 것이다. 필름 스택은 실리콘 기판에 걸쳐서 퇴적된 인 함유 층, 인 함유 층 상에 퇴적된 GaAs 함유 층, 및 GaAs 함유 층 상에 퇴적된 알루미늄 함유 층을 포함한다. 인 함유 층과 알루미늄 함유 층 사이의 GaAs 함유 층은 알루미늄 함유 층의 표면 평활도를 개선한다. Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a phosphorous containing layer deposited over a silicon substrate, a GaAs containing layer deposited on the phosphorous containing layer, and an aluminum containing layer deposited on the GaAs containing layer. The GaAs containing layer between the phosphorous containing layer and the aluminum containing layer improves the surface smoothness of the aluminum containing layer.