3 Three dimensional semiconductor device and manufacturing method of the same
The present invention relates to a three-dimensional semiconductor device and a manufacturing method thereof, comprising: multiple word lines stacked to be spaced apart from each other on a substrate on which a pipe transistor is formed; a first vertical plug and a second vertical plug configured to...
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| Main Author | |
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| Format | Patent |
| Language | English Korean |
| Published |
15.05.2017
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The present invention relates to a three-dimensional semiconductor device and a manufacturing method thereof, comprising: multiple word lines stacked to be spaced apart from each other on a substrate on which a pipe transistor is formed; a first vertical plug and a second vertical plug configured to vertically penetrate the word lines to be connected to both ends of the pipe transistor and having a different width; a bit line connected to the upper part of the first vertical plug; and a source line connected to the upper part of the second vertical plug. The present invention can improve the electrical properties of vertical springs formed in a source area and a drain area.
본 기술은 파이프 트랜지스터가 형성된 기판 상에 서로 이격되어 적층된 다수의 워드라인들; 상기 워드라인들을 수직으로 관통하여 상기 파이프 트랜지스터의 양 끝단에 연결되며, 서로 다른 폭을 갖는 제1 수직 플러그 및 제2 수직 플러그; 상기 제1 수직 플러그의 상부에 연결된 비트라인; 및 상기 제2 수직 플러그의 상부에 연결된 소오스 라인을 포함하는 3차원 반도체 장치 및 이의 제조방법을 포함한다. |
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| Bibliography: | Application Number: KR20150155278 |